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High Current Power MOSFET
Q-Class
IXTQ 40N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Data Sheet
VDSS ID25 RDS(on)
= 500 V = 40 A = 0.16 Ω
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
Maximum Ratings
500
V
500
V
±30
V
±40
V
40
A
160
A
40
A
50
mJ
2.0
mJ
5
V/ns
500
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
1.13/10 Nm/lb.in.
IXTQ40N50Q Datasheet
