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IXTQ450P2 - Power MOSFETs

Download the IXTQ450P2 datasheet PDF. This datasheet also covers the IXTP450P2 variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Avalanche Rated z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP450P2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ450P2 N-ChannelMOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

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IXTQ48N20T Power MOSFET
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IXTQ10P50P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Polar2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP450P2 IXTQ450P2 IXTH450P2 VDSS ID25 RDS(on) trr(typ) = = ≤ = 500V 16A 330mΩ 400ns TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 500 500 V V ± 30 V ± 40 V 16 A 48 A 16 A 750 mJ 10 V/ns 300 W -55 ... +150 150 -55 ... +150 300 260 °C °C °C °C °C 1.13/10 3.0 5.5 6.0 Nm/lb.in.