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Polar2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP450P2 IXTQ450P2 IXTH450P2
VDSS ID25
RDS(on) trr(typ)
= =
≤ =
500V 16A 330mΩ 400ns
TO-220AB (IXTP)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-220 TO-3P TO-247
Maximum Ratings
500 500
V V
± 30 V ± 40 V
16 A 48 A
16 A 750 mJ
10 V/ns
300 W
-55 ... +150 150
-55 ... +150
300 260
°C °C °C
°C °C
1.13/10 3.0 5.5 6.0
Nm/lb.in.
IXTQ450P2 Datasheet
