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Advance Technical Information
PolarP2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTQ470P2
VDSS =
ID25
=
≤ RDS(on)
= trr(typ)
500V 42A 145mΩ 400ns
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
42
A
126
A
42
A
1.3
J
10
V/ns
830
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
5.
IXTQ470P2 Datasheet
