IXTQ480P2 Description
+150 C 300 °C 260 °C 1.13/10 Nm/lb.in. 500 V 3.0 5.0 V 100 nA 5 A 50 μA 120 m TO-3P G D S Tab G = Gate D = Drain S = Source Tab = Drain.
IXTQ480P2 Key Features
- Avalanche Rated
- Fast Intrinsic Diode
- Dynamic dv/dt Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings