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IXTQ480P2 - Power MOSFET

Key Features

  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Dynamic dv/dt Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ480P2 N-ChannelMOSFET INCHANGE

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ480P2 VDSS = ID25 =  RDS(on) = trr(typ) 500V 52A 120m 400ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 V 500 V  30 V  40 V 52 A 150 A 52 A 1.5 J 10 V/ns 960 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.