IXTQ480P2 - Power MOSFET

Features

Avalanche Rated.
Fast Intrinsic Diode.
Dynamic dv/dt Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

Datasheet Details

Part number	IXTQ480P2
Manufacturer	IXYS
File Size	91.55 KB
Description	Power MOSFET
Datasheet	IXTQ480P2 Datasheet
Additional preview pages of the IXTQ480P2 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ480P2 VDSS = ID25 =  RDS(on) = trr(typ) 500V 52A 120m 400ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 V 500 V  30 V  40 V 52 A 150 A 52 A 1.5 J 10 V/ns 960 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.

Published: Nov 21, 2020 |