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IXTQ60N10T - Power MOSFET

Overview

Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.

Key Features

  • z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.