IXTQ60N10T Description
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 100 V 2.5 4.5 V ± 100 nA 1 μA 100 μA 14.8 18.0 mΩ G D S G = Gate S = Source Tab D = Drain Tab = Drain.
IXTQ60N10T is Power MOSFET manufactured by IXYS .
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTQ60N10T | N-Channel MOSFET |
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 100 V 2.5 4.5 V ± 100 nA 1 μA 100 μA 14.8 18.0 mΩ G D S G = Gate S = Source Tab D = Drain Tab = Drain.