IXTQ60N10T - Power MOSFET

Features

z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

IXYS

Datasheet Details

Part number	IXTQ60N10T
Manufacturer	IXYS
File Size	170.07 KB
Description	Power MOSFET
Datasheet	IXTQ60N10T Datasheet
Additional preview pages of the IXTQ60N10T datasheet.

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Full PDF Text Transcription

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Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.0mΩ TO-3P Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 100 V 100 V ± 30 V 60 A 180 A 10 A 500 mJ 176 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.

Published: Nov 20, 2020 |