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IXTQ60N20T - Power MOSFET

Download the IXTQ60N20T datasheet PDF. This datasheet also covers the IXTP60N20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXTP60N20T_IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP).

Key Features

  • z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 0.5.
  • ID25, Note 1 32 Characteristic Values Min. Typ. Max. 200 3.0 5.0 V V z z z Easy to Mount Space Savings High Power Density.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTQ60N20T N-Channel MOSFET INCHANGE
INCHANGE Logo IXTQ60N20L2 N-Channel MOSFET INCHANGE

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