IXTQ75N10P Datasheet N-Channel MOSFET

Manufacturer: IXYS (now Littelfuse)

IXTQ75N10P n-channel mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXTQ75N10P
Manufacturer	IXYS (now Littelfuse)
File Size	294.27 KB
Description	N-Channel MOSFET
Download	IXTQ75N10P Download (PDF)

Overview

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 mΩ TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤150° C, R G = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Maximum Ratings 100 V 100 V ±20 V ±30 V 75 A 200 A 50 A 30 mJ 1.0 J 10 V/ns 360 W -55 ...

+175 °C 175 °C -55 ...

+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99158E(12/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK IXTA 75N10P IXTP 75N10P IXTQ 75N10P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 20 28 S.

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