IXTQ86N20T Overview
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M.
IXTQ86N20T Key Features
- High Current Handling Capability
- Avalanche Rated
- Fast Intrinsic rectifier
- Easy to Mount
- Space Savings
- High Power Density
