Download the IXTQ86N20T datasheet PDF.
This datasheet also covers the IXTA86N20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Full PDF Text Transcription for IXTQ86N20T (Reference)
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IXTQ86N20T. For precise diagrams, and layout, please refer to the original PDF.
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSO...
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Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C 86 260 10 1 550 3 -55 ... +175 175 -55 ... +175 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-3P) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-3P 2.5 g 3.0 g 5.