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IXTQ86N20T - Power MOSFET

This page provides the datasheet information for the IXTQ86N20T, a member of the IXTA86N20T Power MOSFET family.

Features

  • High Current Handling Capability.
  • Avalanche Rated.
  • Fast Intrinsic rectifier.
  • Low R DS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 86 260 10 1 550 3 -55 ... +175 175 -55 ... +175 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-3P) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-3P 2.5 g 3.0 g 5.
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