z Trench gate construction for low R
DS(on)
z International standard package z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space savings
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID =1mA
Characteristic Values Min. Typ. Max. 280
V
VGS(th)
VDS = VGS, ID = 1mA
3.0
5.0 V
IGSS
VGS = ±20 V, VDS = 0V
±200 nA
IDSS
VDS = VDSS VGS = 0 V
TJ = 125°C
1 μA 200 μA
RDS(on)
VGS = 10 V, ID = 0.5.
Full PDF Text Transcription for IXTQ88N28T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ88N28T. For precise diagrams, and layout, please refer to the original PDF.
Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS VDGR VGSM ID25 IDRMS IDM ...
View more extracted text
= ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS VDGR VGSM ID25 IDRMS IDM PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque Maximum Ratings 280 V 280 V TO-3P (IXTQ) ±30 V 88 A G 75 A DS 250 A (TAB) 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.
IXTQ88N28T Datasheet
