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IXTQ88N28T - Power MOSFET

Features

  • z Trench gate construction for low R DS(on) z International standard package z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID =1mA Characteristic Values Min. Typ. Max. 280 V VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V IGSS VGS = ±20 V, VDS = 0V ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 1 μA 200 μA RDS(on) VGS = 10 V, ID = 0.5.
  • ID25, Note.

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Trench Gate Power MOSFET IXTQ88N28T N-Channel Enhancement Mode For Plasma Display Applications VDSS = ID25 = ≤ RDS(on) 280V 88A 44mΩ Symbol VDSS VDGR VGSM ID25 IDRMS IDM PD TJ TJM Tstg T L TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Mounting torque Maximum Ratings 280 V 280 V TO-3P (IXTQ) ±30 V 88 A G 75 A DS 250 A (TAB) 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.
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