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PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR32P60P
VDSS =
ID25 = ≤ RDS(on)
- 600V - 18A
385mΩ
ISOPLUS247 E153432
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA
EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD VISOL
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force
Maximum Ratings
- 600
V
- 600
V
±20
V
±30
V
-18
A
- 96
A
- 32
A
3.5
J
10
V/ns
310
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
V~
20..120/4.5..27 5
N/lb.
IXTR32P60P Datasheet
