Overview: PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated IXTR32P60P VDSS =
ID25 = ≤ RDS(on) - 600V - 18A
385mΩ ISOPLUS247 E153432 Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA
EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD VISOL
Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings - 600 V - 600 V ±20 V ±30 V -18 A - 96 A - 32 A 3.5 J 10 V/ns 310 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 2500 V~ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = -16A, Note 1 Characteristic Values Min. Typ. Max. - 600 V - 2.0 - 4.
