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IXTR36P15P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Preliminary Technical Information PolarPTM Power MOSFET (Electrically Isolated Tab) IXTC36P15P IXTR36P15P VDSS = -150V ID25 = - 22A RDS(on) ≤ 120mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS, t = 1minute Mounting Force (ISOPLUS220) Mounting Force (ISOPLUS247) ISOPLUS220 ISOPLUS247 Maximum Ratings -150 -150 V V ± 20 ± 30 - 22 -100 - 36 1.5 V V A A A J 10 150 - 55 ... +175 175 - 55 ... +175 300 260 2500 11..65 / 25..14.6 20..120 / 4.5..27 2 5 V/ns W °C °C °C °C °C V~ N/lb N/lb g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = -10V, ID = -18A, Note 1 Characteristic Values Min. Typ. Max. -150 V - 3.0 - 5.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

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