Overview: Preliminary Technical Information PolarHTTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N15P VDSS = ID25 =
RDS(on) ≤ 150 36 45 V A mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL FC
Weight Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Mounting force ISOPLUS220 ISOPLUS247 ISOPLUS220 ISOPLUS247 Maximum Ratings 150 V 150 V ± 20 ± 30
36 150
50 30 1.0 V V
A A
A mJ
J 10 V/ns 150
-55 ... +175 150
-55 ... +150
300
11..65 / 2.5..15 20..120 / 4.5..25
3 5 W
°C °C °C
°C
N/lb N/lb
g g Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125° C RDS(on) VGS = 10 V, ID = 31 A, Note 1 Characteristic Values Min. Typ. Max. 150 V
3.0 5.
