Overview: PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated IXTR90P10P
D G
S VDSS = ID25 RDS(on) = ≤ - 100V - 57A
27mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ , RMS t = 1min Mounting Force Maximum Ratings - 100 - 100 V V ±20 ±30
- 57 - 225
- 90 2.5 V V
A A
A J 10 V/ns 190 W -55 ... +150 150
-55 ... +150
300 260
2500
20..120/4.5..27
6 °C °C °C °C °C V~ N/lb.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 45A, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.
