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High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU05N100 IXTY05N100
VDSS =
ID25 = RDS(on)
1000V 750mA 17
TO-251 (IXTU)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
PD
TJ TJM Tstg
TL TSOLD FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252
Maximum Ratings
1000
V
1000
V
30
V
40
V
750
mA
3
A
1
A
100
mJ
3
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.40
g
0.
IXTU05N100 Datasheet
