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IXTU5N50P - Power MOSFET

Download the IXTU5N50P datasheet PDF. This datasheet also covers the IXTA5N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA5N50P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTU5N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTU5N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL...

View more extracted text
50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 5 10 5 250 10 90 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-251 TO-252 TO-263 TO-220 0.40 g 0.35 g

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTU5N50P N-Channel MOSFET INCHANGE

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