IXYS IXTV200N10TS
Power MOSFET
| Part No. | IXTV200N10TS |
|---|---|
| Datasheet | IXTV200N10TS Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
100 100 ± 30 200 75 500 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 11.65 / 2.5..14.6 4 V V V A A A A J W °C °C °C °C °C N/lb. gFEATURES
International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power densityAPPLICATIONS
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current SwitchingAPPLICATIONS
G = Gate S = Source D = Drain TAB = Drain G S G D S D (TAB) PLUS220SMD (IXFV_S) D (TAB) Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 2.5 4.5 V V ±200 nA 5 250 4.5 μA μA 5.5 mΩ © 2008 IXYS CORPORATION, All rights reserved DS99714A(10/08) IXTV200N10T IXTV200N10TS Symbol Test Conditions (TJ = 25°C, un...
