IXTV22N60PS Datasheet | IXYS

.. Polar HV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(on) = 600 V = 22 A ≤ 330 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 400 -55 ... +150 150 -55 ... +150 300 250 W °C °C °C °C °C Maximum Ratings 600 600 ± 20 ± 30 22 66 22 40 1.0 10 V V V V A A A m J J V/ns G D S D (TAB) (TAB) PLUS220 (IXTV) PLUS220SMD (IXTV_S) G S D (TAB) 1.13/10 Nm/lb.in. 6 5.0 g g G = Gate S = Source D = Drain TAB = Drain TO-3P PLUS220 & PLUS220SMD Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V n A µA µA mΩ z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99250B(04/05) IXTQ 22N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 15 21 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 38 20 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 Ω (External) 20 60 23 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 55 0.31 (TO-3P) 0.21 S p F p F p F ns ns ns ns n C n C n C K/W K/W IXTV 22N60P IXTV 22N60PS .. TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth...