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IXTV30N50PS - PolarHV Power MOSFET

Download the IXTV30N50PS datasheet PDF. This datasheet also covers the IXTH30N50P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect DS99415(07/05) © 2005 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 17 27 4150 VGS = 0 V, VDS = 25 V, f = 1 MHz 445 28 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 Ω (External) 27 75 21 70 VGS= 10 V, VDS = 0.5 VDSS, ID =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH30N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTV30N50PS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTV30N50PS. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(...

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30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS VDSS ID25 RDS(on) = 500 V = 30 A = 200 mΩ www.DataSheet4U.com TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C G G G D S (TAB) TO-247 AD (IXTH) (TAB) TO-268 (IXTT) S D (TAB)