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Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement ModeAvalanche Rated
IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS
VDSS ID25
RDS(on)
= 500 V = 30 A = 200 mΩ
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TO-3P (IXTQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C G
G
G
D
S
(TAB)
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT)
S
D (TAB)
PLUS220 (IXTV)
1.6 mm (0.062 in.
IXTV30N50PS Datasheet
