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IXTX170P10P - Power MOSFET

Download the IXTX170P10P datasheet PDF. This datasheet also covers the IXTK170P10P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IXTK170P10P-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTK170P10P IXTX170P10P VDSS = ID25 = ≤RDS(on) -100V -170A 12mΩ TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force (PLUS247) Mounting Forque (TO-264) PLUS247 TO-264 Maximum Ratings -100 -100 V V ±20 ±30 -170 -160 - 510 V V A A A -170 A 3.5 J 10 V/ns 890 W -55 ...

+150 150 -55 ...

+150 300 260 20..120 / 4.5..27 1.13 / 10 6 10 °C °C °C °C °C N/lb.

Key Features

  • z International Standard Packages z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density.

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