IXTX60N50L2 - Power MOSFET

Features

Designed for linear operation.
International standard packages.
Avalanche rated.
Guaranteed FBSOA at 75C Advantages.
Easy to mount.
Space savings.
High power density.

IXYS

Datasheet Details

Part number	IXTX60N50L2
Manufacturer	IXYS
File Size	159.72 KB
Description	Power MOSFET
Datasheet	IXTX60N50L2 Datasheet
Additional preview pages of the IXTX60N50L2 datasheet.

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Full PDF Text Transcription

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LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 RDS(on) = 500V = 60A < 100m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C 60 150 60 3 960 -55...+150 150 -55...+150 A A A J W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.

Published: Dec 16, 2013 |