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IXTY14N60X2 - Power MOSFET

Key Features

  • International Standard Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTY12N06T Power MOSFET
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IXTY1N80 High Voltage MOSFET
IXTY1N80P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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X2-Class Power MOSFET N-Channel Enhancement Mode IXTY14N60X2 D G S Symbol V DSS VDGR VGSS V GSM ID25 I DM IA EAS dv/dt PD T J TJM Tstg TSOLD Weight Test Conditions T J = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C T C = 25C, Pulse Width Limited by T JM TC = 25C TC = 25C I S  I, DM V DD  V, DSS T J  150°C TC = 25C Plastic Body for 10s Maximum Ratings 600 V 600 V 30 V 40 V 14 A 18 A 7 A 150 mJ 15 V/ns 180 W -55 ... +150 C 150 C -55 ... +150 C 260 °C 0.35 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250µA V GS(th) V = V , I = 250µA DS GS D IGSS VGS = 30V, VDS = 0V I V = V , V = 0V DSS DS DSS GS TJ = 125C RDS(on) VGS = 10V, ID = 0.