IXTY1R4N60P Description
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous.
IXTY1R4N60P Key Features
- International Standard Packages
- Low QG
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- High Power Density
- Easy to Mount
- Space Savings