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IXTY4N70X2 - Power MOSFET

Download the IXTY4N70X2 datasheet PDF. This datasheet also covers the IXTU4N70X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU4N70X2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTY4N70X2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTY4N60P PolarHV Power MOSFET
IXTY4N65X2 Power MOSFET
IXTY48P05T Power MOSFET
IXTY02N120P Power MOSFET
IXTY05N100 Power MOSFET
IXTY08N100D2 Power MOSFET
IXTY08N100P Power MOSFET
IXTY12N06T Power MOSFET
IXTY14N60X2 Power MOSFET
IXTY18P10T Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2 VDSS = ID25 =  RDS(on) 700V 4A 850m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 4 8 2 150 50 80 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.