IXUC60N10 Description
Note 1 TC = 90°C, Note 1 TC = 25°C; +150 °C °C °C 300 °C 2500 V~ 11 ... 65 / 2.4 ...11 N/lb 2g Symbol RDS(on) VGS(th) IDSS I GSS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXUC60N10 is Power MOSFET manufactured by IXYS.
Note 1 TC = 90°C, Note 1 TC = 25°C; +150 °C °C °C 300 °C 2500 V~ 11 ... 65 / 2.4 ...11 N/lb 2g Symbol RDS(on) VGS(th) IDSS I GSS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.