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IXXH110N65B4 - 650V IGBT

Features

  • Optimized for 10-30kHz Switching.
  • Square RBSOA.
  • Short Circuit Capability.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Datasheet preview – IXXH110N65B4

Datasheet Details

Part number IXXH110N65B4
Manufacturer IXYS
File Size 671.92 KB
Description 650V IGBT
Datasheet download datasheet IXXH110N65B4 Datasheet
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Full PDF Text Transcription

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XPTTM 650V IGBT GenX4TM IXXH110N65B4 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V I = 110A C110 V  2.10V CE(sat) tfi(typ) = 43ns Symbol VCES V CGR VGES VGEM I C25 ILRMS IC110 ICM SSOA (RBSOA) t sc (SCSOA) P C T J TJM T stg T L M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load V = 15V, V = 360V, T = 150°C GE CE J RG = 82, Non Repetitive T = 25°C C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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