IXXH110N65B4 Description
+175 °C 300 °C 1.13/10 6 Nm/lb.in. 650 V 4.0 6.5 V 10 µA 500 µA ±100 nA 1.72 2.05 2.10 V V TO-247 G G C E Tab G = Gate C = Collector E = Emitter Tab = Collector.
IXXH110N65B4 Key Features
- Optimized for 10-30kHz Switching
- Square RBSOA
- Short Circuit Capability
- High Current Handling Capability
- International Standard Package
- High Power Density
- Low Gate Drive Requirement