IXXH40N65C4D1 Datasheet Extreme Light Punch Through IGBT

Manufacturer: IXYS (now Littelfuse)

IXXH40N65C4D1 extreme light punch through igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXXH40N65C4D1
Manufacturer	IXYS (now Littelfuse)
File Size	240.20 KB
Description	Extreme Light Punch Through IGBT
Download	IXXH40N65C4D1 Download (PDF)

Overview

Advance Technical Information XPTTM 650V IGBT GenX4TM w/Diode IXXH40N65C4D1 Extreme Light Punch Through IGBT for 5-20 kHz Switching VCES = 650V IC110 = 40A V CE(sat)  2.3V tfi(typ) = 27ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 110 A 40 A 55 A 215 A ICM = 80 A  @VCE VCES 10 μs 455 -55 ...

+175 175 -55 ...

+175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.

Key Features

Optimized for 5-20kHz Switching.
Square RBSOA.
Anti-Parallel Diode.
Avalanche Rated.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 T.

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