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IXXH60N65B4H1 - Extreme Light Punch Through IGBT

Features

  • Optimized for 5-30kHz Switching.
  • Square RBSOA.
  • Anti-Parallel Sonic Diode.
  • Short Circuit Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement.

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Datasheet preview – IXXH60N65B4H1

Datasheet Details

Part number IXXH60N65B4H1
Manufacturer IXYS
File Size 237.84 KB
Description Extreme Light Punch Through IGBT
Datasheet download datasheet IXXH60N65B4H1 Datasheet
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XPTTM 650V IGBT IXXH60N65B4H1 GenX4TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 145 A 60 A 47 A 265 A ICM = 120 A  @VCE VCES 10 μs 536 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.
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