IXXH75N60B3D1 - Extreme Light Punch Through IGBT

Features

z Optimized for 5-30kHz Switching z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Capability z Short Circuit Capability z International Standard Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXXH75N60B3D1
Manufacturer	IXYS
File Size	193.14 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXXH75N60B3D1 Datasheet
Additional preview pages of the IXXH75N60B3D1 datasheet.

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Full PDF Text Transcription

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 160 A 75 A 30 A 300 A 30 A 500 mJ ICM = 150 A ≤ @VCE VCES 10 μs 750 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.in.

Published: Feb 9, 2025 |