IXXH75N60C3D1 - 600V IGBT

Features

z Optimized for 20-60kHz Switching z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Capability z Short Circuit Capability z International Standard Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXXH75N60C3D1
Manufacturer	IXYS
File Size	193.39 KB
Description	600V IGBT
Datasheet	IXXH75N60C3D1 Datasheet
Additional preview pages of the IXXH75N60C3D1 datasheet.

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Full PDF Text Transcription

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC= 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 150 A 75 A 30 A 300 A 30 A 500 mJ ICM = 150 A ≤ @VCE VCES 10 μs 750 -55 ... +175 175 -55 ... +175 300 260 1.

Published: Feb 9, 2025 |