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XPTTM 650V IGBT GenX4TM w/ Sonic Diode
Extreme Light Punch Through IGBT for 5-30 kHz Switching
IXXH80N65B4H1
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
650
V
650
V
±20
V
±30
V
160
A
80
A
62
A
430
A
ICM = 160
A
@VCE VCES
10
μs
625
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6
W
°C °C °C
°C °C
Nm/lb.in.
IXXH80N65B4H1 Datasheet
