IXXK110N65B4H1 - Extreme Light Punch Through IGBT

Features

Optimized for 10-30kHz Switching.
Square RBSOA.
Short Circuit Capability.
Anti-Parallel Sonic Diode.
High Current Handling Capability.
International Standard Packages Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXXK110N65B4H1
Manufacturer	IXYS
File Size	395.96 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXXK110N65B4H1 Datasheet
Additional preview pages of the IXXK110N65B4H1 datasheet.

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Full PDF Text Transcription

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XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 110A V CE(sat)  2.10V tfi(typ) = 43ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 250 A 160 A 110 A 78 A 570 A VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 A  @VCE VCES VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs TC = 25°C 880 W -55 ... +175 °C 175 °C -55 ...

Published: Feb 6, 2019 |