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IXXN100N60B3H1 - Extreme Light Punch Through IGBT

Features

  • z Optimized for Low Switching Losses z International Standard Package z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Optimized for 10-30kHz Switching z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement.

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XPTTM 600V IGBT GenX3TM w/ Diode IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Calability) TC = 90°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 600 V 600 V ±20 V ±30 V 170 A 100 A 50 A 440 A 50 A 600 mJ ICM = 200 A ≤ @VCE VCES 10 μs 500 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.
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