Overview: XPTTM 600V IGBT GenX3TM w/ Diode IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol
VCES VCGR VGES VGEM IC25 IC90 IF110 ICM IA EAS SSOA (RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg VISOL
Md
Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC = 25°C (Chip Calability) TC = 90°C TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive
TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 600 V 600 V ±20 V ±30 V 170 A 100 A 50 A 440 A 50 A 600 mJ ICM = 200 A ≤ @VCE VCES 10 μs 500 -55 ... +150
150 -55 ... +150
2500 3000
1.5/13 1.3/11.5
30 W °C °C °C V~ V~
Nm/lb.in. Nm/lb.in.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 50 μA 4 mA ±100 nA 1.50 1.77 1.80 V V VCES = IC90 = V ≤ CE(sat) tfi(typ) = 600V 100A
1.
