Overview: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg VISOL
Md
Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive
TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 200 A 98 A 30 A 1000 A 100 A 1 J ICM = 400 A ≤ @VCE VCES 10 μs 780
-55 ... +150 150
-55 ... +150
2500 3000
1.5/13 1.3/11.5
30 W
°C °C °C
V~ V~
Nm/lb.in. Nm/lb.in.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V Note 2, TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 600 V 3.5 6.0 V 50 μA 3 mA ±200 nA 1.40 1.58 1.70 V V VCES = IC110 =
V ≤ CE(sat) tfi(typ) = 600V 98A
1.
