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IXXN200N60C3H1 - Extreme Light Punch Through IGBT

Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Switching Losses z Isolated Mounting Surface z Anti-Parallel Sonic Diode z 2500V~ Electrical Isolation z Optimized for 20-60kHz Switching z Avalanche Rated z Short Circuit Capability z Very High Current Capability z Square RBSOA Advantages z High Power Density z Low Gate Drive Requirement.

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Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXXN200N60C3H1 E Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 200 A 98 A 30 A 1000 A 100 A 1 J ICM = 400 A ≤ @VCE VCES 10 μs 780 -55 ... +150 150 -55 ...
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