IXXR110N65B4H1
IXXR110N65B4H1 is 650V IGBT manufactured by IXYS.
XPTTM 650V Gen X4TM IXXR110N65B4H1 w/ Sonic Diode
(Electrically Isolated Tab)
Extreme Light Punch Through IGBT for 10-30k Hz Switching
VCES = 650V
IC110 = 70A
V CE(sat)
2.10V tfi(typ) = 43ns
ISOPLUS247TM
Symbol
VCES VCGR VGES VGEM
IC25 IC110 IF110 ICM
SSOA (RBSOA) tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD
VISOL
FC Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient
Maximum Ratings
±20
±30
TC = 25°C (Chip Capability) TC = 110°C TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load
ICM = 220
@VCE VCES
VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive
μs
TC = 25°C
-55 ......
