IXXR110N65B4H1 Description
650 V 4.0 6.5 V 25 μA 3 μA ±100 nA 1.72 2.05 2.10 V V G CE Isolated Tab G = Gate E = Emitter C = Collector.
IXXR110N65B4H1 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
- Optimized for 10-30kHz Switching
- Square RBSOA
- Short Circuit Capability
- Anti-Parallel Sonic Diode
- High Current Handling Capability
- High Power Density
- Low Gate Drive Requirement