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XPTTM 650V IGBT GenX4TM w/Sonic Diode
Extreme Light Punch Through IGBT for 10-30kHz Switching
IXXX140N65B4H1
VCES = 650V
I
= 140A
C110
V 1.90V CE(sat)
tfi(typ) = 44ns
Symbol
VCES V
CGR
VGES VGEM
I
C25
ILRMS IC110 IF110 I
CM
SSOA (RBSOA)
t sc
(SCSOA)
P C
TJ TJM T
stg
T L
FC
Weight
Test Conditions
TJ = 25°C to 175°C
T J
=
25°C
to
175°C,
R GE
=
1M
Continuous
Transient
Maximum Ratings
650
V
650
V
±20
V
±30
V
T = 25°C (Chip Capability) C
Terminal Current Limit
TC = 110°C TC = 110°C
T = 25°C, 1ms C
340
A
160
A
140
A
72
A
840
A
VGE = 15V, TVJ = 150°C, RG = 4.7 Clamped Inductive Load
ICM = 240
A
VCE VCES
V = 15V, V = 400V, T = 150°C
GE
CE
J
RG = 10, Non Repetitive
10
µs
T = 25°C C
1200
W
-55 ... +175
°C
175
°C
-55 ...
IXXX140N65B4H1 Datasheet
