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IXYA20N120A4HV - IGBT

Key Features

  • Optimized for Low Conduction Losses.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching IXYA20N120A4HV IXYP20N120A4 VCES = 1200V IC110 = 20A VCE(sat)  1.9V tfi(typ) = 160ns Symbol VCES VCGR VGES VGEM IIICCC21M510 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C 80 20 135 ICM = 40 VCE 0.8 • VCES 375 -55 ... +175 175 -55 ... +175 A A A A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263HV) 1.13/10 10..65 / 22..14.6 Nm/lb.in N/lb TO-263HV TO-220 2.5 g 3.