IXYA24N100A4HV - Ultra-Low Vsat PT IGBT

Datasheet Summary

Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Packages Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXYA24N100A4HV
Manufacturer	IXYS
File Size	349.56 KB
Description	Ultra-Low Vsat PT IGBT
Datasheet	IXYA24N100A4HV Datasheet
Additional preview pages of the IXYA24N100A4HV datasheet.

📁 Similar Datasheet

IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)
IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)

Other Datasheets by IXYS

IXYA24N100C4HV - High Speed IGBT
IXYA20N120A4HV - IGBT
IXYA20N120B4HV - IGBT
IXYA20N120C4HV - IGBT
IXYA20N65B3 - IGBT
IXYA20N65C3 - IGBT
IXYA20N65C3D1 - IGBT
IXYA12N250CHV - High Voltage IGBT

Full PDF Text Transcription

Click to expand full text

1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC110 = 24A V CE(sat)  1.9V tfi(typ) = 125ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1000 V 1000 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 85 A 24 A 145 A VGE = 15V, TVJ = 150°C, RG = 10 ICM = 48 A Clamped Inductive Load  VCE 0.8 • VCES VGE = 15V, VCE = 660V, TJ = 150°C RG = 50, Non Repetitive 8 μs TC = 25°C 375 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Feb 10, 2025 |