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IXYA30N120A4HV - Ultra Low-Vsat PT IGBT

Features

  • Optimized for Low Conduction.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 25A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.0 6.5 V 10 A 500 A 100 nA 1.6 1.9 V 1.9 V.

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Advance Technical Information 1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 106 A 30 A 184 A ICM = 60 A  VCE 0.8 • VCES 500 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-220 & TO-247) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.
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