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IXYA30N120A4HV - Ultra Low-Vsat PT IGBT

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IXYS

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IXYA30N120A4HV Ultra Low-Vsat PT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYA30N120A4HV

Datasheet Details

Part number	IXYA30N120A4HV
Manufacturer	IXYS
File Size	396.57 KB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYA30N120A4HV Datasheet
Additional preview pages of the IXYA30N120A4HV datasheet.

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Features

Optimized for Low Conduction.
Positive Thermal Coefficient of Vce(sat).
International Standard Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 25A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.0 6.5 V 10 A 500 A 100 nA 1.6 1.9 V 1.9 V.

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Published: Feb 9, 2025 |