IXYF40N450 Description
+150 °C 300 °C 260 °C 20..120 / 4.5..27 4000 Nm/lb.in.
IXYF40N450 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density