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IXYF40N450 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 (Electrically Isolated Tab) VCES = IC110 = VCE(sat)  4500V 32A 3.9V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load PC TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4500 V 4500 V ± 20 V ± 30 V 60 A 32 A 350 A ICM = 120 A 3600 V 290 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 20..120 / 4.5..27 4000 Nm/lb.in.
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