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IXYH16N250CV1HV - High Voltage IGBT

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH16N250CV1HV VCES = 2500V IC110 = 16A V CE(sat)  4.0V tfi(typ) = 250ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 2500 V 2500 V ±20 V ±30 V 38 A 16 A 14 A 126 A ICM = 64 A 1500 V 500 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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