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IXYH24N90C3D1 - High-Speed IGBT

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Anti-Parallel Ultra Fast Diode.
  • Avalanche Rated.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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900V XPTTM IGBT GenX3TM w/Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH24N90C3D1 VCES = 900V IC90 = 24A V CE(sat)  3.0V tfi(typ) = 90ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 90° TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 900 V 900 V ±20 V ±30 V 44 A 24 A 15 A 105 A 15 A 150 mJ ICM = 48 A  @VCE VCES 200 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.