IXYH24N90C3D1 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 950 V 3.5 6.0 V 75 A 400 μA 100 nA 2.30 2.95 3.00 V V TO-247 G C E Tab G = Gate E = Emitter C = Collector Tab = Collector.
IXYH24N90C3D1 Key Features
- Optimized for Low Switching Losses
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- High Current Handling Capability
- International Standard Package
- High Power Density
- Low Gate Drive Requirement