IXYH24N90C3D1 - High-Speed IGBT

Datasheet Summary

Features

Optimized for Low Switching Losses.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
Anti-Parallel Ultra Fast Diode.
Avalanche Rated.
High Current Handling Capability.
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

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Datasheet Details

Part number	IXYH24N90C3D1
Manufacturer	IXYS
File Size	377.98 KB
Description	High-Speed IGBT
Datasheet	IXYH24N90C3D1 Datasheet
Additional preview pages of the IXYH24N90C3D1 datasheet.

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Full PDF Text Transcription

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900V XPTTM IGBT GenX3TM w/Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYH24N90C3D1 VCES = 900V IC90 = 24A V CE(sat)  3.0V tfi(typ) = 90ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 90° TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 900 V 900 V ±20 V ±30 V 44 A 24 A 15 A 105 A 15 A 150 mJ ICM = 48 A  @VCE VCES 200 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.

Published: Feb 10, 2025 |