IXYH50N120C3D1 Datasheet PDF

MAXIMUM RATINGS

1200 V 1200 V ±20 V ±30 V 90 A 50 A 25 A 210 A ICM = 100 A  @VCE VCES 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 A 500 μA 100 nA 3.5 V 4.2 V VCES = 1200V IC100 = 50A V CE(sat)  3.5V tfi(typ) = 43ns TO-247 AD G C E G = Gate E = Emitter Tab C = Collector Tab = Collector

FEATURES

● Optimized for Low Switching Losses
● Square RBSOA
● Positive Thermal Coefficient of Vce(sat)
● Anti-Parallel Ultra Fast Diode
● High Current Handling Capability
● International Standard Package Advantages
● High Power Density
● Low Gate Drive Requirement

APPLICATIONS

● High Frequency Power Inverters
● UPS
● Motor Drives
● SMPS
● PFC Circuits
● Battery Char...