IXYL40N250CV1 Description
2500 V 3.0 5.0 V 25 μA 5 mA ±100 nA 3.2 4.0 V 4.4 V ISOPLUS i5-PakTM G E C G = Gate C = Collector Isolated Tab E = Emitter.
IXYL40N250CV1 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4500V~ Electrical Isolation
- High Voltage Package
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density