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IXYL40N250CV1 Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYL40N250CV1 VCES = 2500V IC110 = 40A V CE(sat)  4.0V tfi(typ) = 134ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Force Maximum Ratings 2500 V 2500 V ±20 V ±30 V 80 A 40 A 23 A 380 A ICM = 80 1500 577 -55 ... +175 175 -55 ... +175 300 260 40..120 / 9..27 A V W °C °C °C °C °C N/lb 50/60 Hz, RM, t = 1min 2500 V~ 8 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 2500 V 3.0 5.0 V 25 μA 5 mA ±100 nA 3.2 4.0 V 4.

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4500V~ Electrical Isolation.
  • High Voltage Package.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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