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IXYL60N450 - High Voltage IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V  3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 4.7 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Force Maximum Ratings 4500 V 4500 V ±20 V ±30 V 90 A 38 A 680 A ICM = 120 A 1500 V 417 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 40..120 / 9..27 N/lb 50/60 Hz, RM, t = 1min 4000 V~ 8 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ.
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