Download IXYP20N65B3D1 Datasheet PDF
IXYP20N65B3D1 page 2
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IXYP20N65B3D1 Key Features

  • Optimized for 5-30kHz Switching
  • Square RBSOA
  • Avalanche Rated
  • Anti-Parallel Fast Diode
  • Short Circuit Capability
  • International Standard Package
  • High Power Density
  • Extremely Rugged
  • Low Gate Drive Requirement

IXYP20N65B3D1 Description

+175 300 260 1.13/10 3.0 W °C °C °C °C °C Nm/lb.in. 650 V 3.5 6.0 V 10 A 400 A 100 nA 1.77 2.05 2.10 V V GC E Tab G = Gate E = Emitter C = Collector Tab = Collector.