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IXYP24N100A4 - Ultra-Low Vsat PT IGBT

Download the IXYP24N100A4 datasheet PDF. This datasheet also covers the IXYA24N100A4HV variant, as both devices belong to the same ultra-low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Optimized for Low Conduction Losses.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYA24N100A4HV-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC110 = 24A V CE(sat)  1.9V tfi(typ) = 125ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1000 V 1000 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 85 A 24 A 145 A VGE = 15V, TVJ = 150°C, RG = 10 ICM = 48 A Clamped Inductive Load  VCE 0.8 • VCES VGE = 15V, VCE = 660V, TJ = 150°C RG = 50, Non Repetitive 8 μs TC = 25°C 375 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.