Datasheet4U Logo Datasheet4U.com

IXYT12N250CV1HV - High Voltage IGBT

Features

  • High Voltage Packages.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

📥 Download Datasheet

Datasheet preview – IXYT12N250CV1HV
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYT12N250CV1HV IXYH12N250CV1HV VCES = 2500V IC110 = 12A V CE(sat)  4.50V tfi(typ) = 136ns TO-268HV (IXYT) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247HV) TO-268HV TO-247HV Maximum Ratings 2500 V 2500 V ±20 V ±30 V 28 A 12 A 14 A 80 A ICM = 48 A 1500 V 310 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
Published: |