IXYT85N120A4HV - Ultra Low-Vsat PT IGBT

Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYT85N120A4HV Ultra Low-Vsat PT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYT85N120A4HV

Datasheet Details

Part number	IXYT85N120A4HV
Manufacturer	IXYS (now Littelfuse)
File Size	940.67 KB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYT85N120A4HV Datasheet
Additional preview pages of the IXYT85N120A4HV datasheet.

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Full PDF Text Transcription

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1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYT85N120A4HV VCES = 1200V IC110 = 85A V  1.8V CE(sat) tfi(typ) = 280ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum Ratings 1200 V 1200 V ±20 V ±30 V 300 A 160 A 85 A 520 A ICM = 170 A  VCE 0.8 • VCES 1150 W -55 ... +175 °C 175 °C -55 ...

Published: Feb 11, 2025 |