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IXYX140N120A4 - Ultra Low-Vsat IGBT

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Overview

1200V XPTTM IGBT GenX4TM Ultra Low-Vsat IGBT for up to 5kHz Switching IXYX140N120A4 VCES = 1200V IC110 = 140A V  1.70V CE(sat) tfi(typ) = 320ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 480 A 160 A 140 A 1200 A ICM = 280 A 0.8 • VCES V 1500 W -55 ...

+175 °C 175 °C -55 ...

+175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C Mounting Force 20..120 /4.5..27 N/lb 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min.

Key Features

  • Optimized for Low Conduction Losses.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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